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Which mechanism limits electron mobility in silicon transistor channels at cryogenic temperatures?

A)Phonon scattering becomes less frequent
B)Impact ionization diminishes with temperature
C)Surface roughness scattering is dominant
D)Quantum tunneling probability decreases greatly

💡 Explanation

Surface roughness scattering dominates because carrier de Broglie wavelengths become comparable to interfacial imperfections enhancing surface interactions, resulting in increased scattering; therefore mobility is limited, rather than increased phonon scattering at higher temps.

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