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Which mechanism limits electron mobility through silicon crystal lattice with increasing temperature?

A)Increased phonon scattering probability
B)Elevated electron-hole recombination volume
C)Enhanced Auger emission coefficient
D)Reduced energy bandgap confinement well

💡 Explanation

With increasing temperature, lattice vibrations (phonons) increase in silicon. These phonons scatter electrons, disrupting their drift and reducing the electron mobility because the electrons collide more often with the vibrating lattice. Therefore phonon scattering limits mobility, rather than recombination, emission, or bandgap changes whose effects are different.

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