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Which mechanism limits silicon carbide (SiC) MOSFET switching frequency?

A)Reverse recovery of parasitic diode
B)Gate oxide breakdown susceptibility
C)Channel mobility temperature instability
D)Avalanche injection carrier accumulation

💡 Explanation

The _reverse recovery_ of the parasitic body diode induces switching losses in SiC MOSFETs because stored charge must be cleared before blocking voltage; therefore, switching frequency is constrained rather than being limited by gate oxide or channel mobility at typical conditions.

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