Which mechanism limits transistor scaling when gate oxide thickness approaches a single atomic layer of silicon dioxide?

💡 Explanation

As gate oxide thickness decreases to atomic scales, quantum tunneling occurs because the electron wave function has a non-zero probability of penetrating the thin insulating barrier, creating leakage current. Therefore unwanted current leakage results, rather than scattering, defects or reduced mobility which involve material properties, not quantum effects.

• Which consequence results when waveguide impedance discontinuities cause reflections?
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