Which mechanism limits tunneling current through ultrathin gate oxide in MOSFET transistors at nanoscale dimensions?

💡 Explanation

When transistors shrink to nanoscale, quantum confinement affects electron wave functions, increasing effective barrier width and reducing tunneling probability through thin gate oxide. Therefore quantum confinement primarily limits the tunneling current, rather than space charge, phonon scattering, or interface traps which require different limiting factors.

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