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← ScienceWhich mechanism precipitates increased recombination in strained silicon?
A)Trap-assisted Shockley-Read-Hall recombination✓
B)Auger electron impact ionization
C)Increased band-to-band tunneling
D)Surface plasmon polariton generation
💡 Explanation
Increased trap state density arises because strain induces defects and dislocations, boosting the availability of intermediate energy levels within the bandgap, increasing the Shockley-Read-Hall recombination rate; therefore, excess electron-hole pairs quickly recombine, rather than contributing to current production in an unrestrained crystal.
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