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Which mechanism reduces electron mobility in silicon nanowire transistors?

A)Phonon scattering by the lattice
B)Quantum tunneling of electrons
C)Electromagnetic interference from fields
D)Increased carrier concentration gradient

💡 Explanation

Phonon scattering is dominant because lattice vibrations impede electron flow, therefore limiting mobility. This increase in resistance results rather than quantum tunneling becoming prominent as nanowire size reduces band gaps, under high field influence.

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