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Which outcome accelerates transistor aging in silicon crystals?

A)Hot carrier degradation near drain
B)Kirkendall effect in bonding wires
C)Electromigration at metal interconnects
D)Galvanic corrosion of aluminum pads

💡 Explanation

Hot carrier degradation causes damage; because high electric fields accelerate electron kinetic energy, creating defects near the drain region via impact ionization. Therefore, threshold voltage shifts occur worsening device performance rather than alternative galvanic or mechanical failures.

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