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Which outcome accompanies increased temperature of MOSFETs carrying a saturated signal?

A)Reduced on-state current amplification factor
B)Increased gate oxide layer breakdown risk
C)Enhanced electron mobility within channel
D)Lower subthreshold swing voltage requirement

💡 Explanation

Decreased current amplification results because temperature increases phonon scattering, which reduces carrier mobility via the **Drift Velocity Saturation** mechanism; therefore signal amplification decreases, rather than mobility improvements which occur via alternative doping methods.

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