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← TechnologyWhich outcome arises to gallium-nitride transistors from exceeding peak reverse voltage?
A)Avalanche breakdown reduces operating lifespan✓
B)Increased carrier mobility enhances performance
C)Thermal runaway stabilizes current flow
D)Improved gate oxide integrity ensures reliability
💡 Explanation
Avalanche breakdown occurs because high electric fields accelerate electrons, generating electron-hole pairs. This uncontrolled carrier multiplication causes device damage, rather than enhancing performance, therefore reducing the transistor lifespan. Thermal runaway is instead a consequence of power dissipation.
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