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Which outcome arises when a power MOSFET's gate charge insufficient during high-frequency switching?

A)Increased switching losses occur
B)Enhanced thermal runaway threshold
C)Gate oxide layer strengthening
D)Reduced electromagnetic interference (EMI)

💡 Explanation

Increased switching losses occur because the MOSFET does not fully transition between on/off states, due to insufficient gate charge. The mechanism is incomplete channel formation; therefore current flows during the transition, rather than a sharp on/off.

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