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Which outcome arises when rapid cooling traps metastable gallium arsenide crystal structures?

A)Increased vacancy defect concentration
B)Enhanced intrinsic carrier mobility
C)Reduced surface state recombination
D)Elevation of Debye temperature limit

💡 Explanation

Increased defect concentration occurs because rapid cooling prevents atoms from reaching equilibrium lattice positions during the solidification process, leading to Frenkel defects. Therefore vacancies increase, rather than improving carrier mobility, which involves different structural order properties, or altering quantum mechanics.

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