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Which outcome compromises semiconductor fabrication precision with decreasing feature sizes?

A)Electron tunneling induced current leakage
B)Electromagnetic interference induced data corruption
C)Thermal expansion causing pattern misalignments
D)Increased ion implantation depth dispersion

💡 Explanation

Increased quantum tunneling becomes prevalent in nanoscale transistors, because as gate oxide thickness decreases, electrons tunnel through the gate, causing current leakage and increased power consumption; therefore, performance decreases, rather than ideal switching behavior obtained at the designed thresholds.

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