Which outcome impairs flash memory cell endurance when threshold voltages shift?

💡 Explanation

Oxide trap creation results from electrons tunneling into the gate oxide. The increased charge causes the programmed threshold voltage to change because repeated programming stresses the insulator; therefore memory fails, rather than another degradation effect like channel resistance reduction.

• Which outcome occurs when a GPS satellite's gravitational potential energy increases at orbital altitude, relative to Earth's surface?
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• Which risk increases when microwave radiation excites rotational modes excessively in molecular food structures?
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• Which outcome occurs in a solution when doping with magnesium chloride?