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Which outcome increases in nanoscale flash memory when the oxide layer thickness decreases below 3nm?

A)Data retention due to quantum tunneling
B)Write speed due to channel mobility
C)Power consumption due to Fowler-Nordheim tunneling
D)Endurance due to interface trap generation

💡 Explanation

When the oxide layer is very thin, Fowler-Nordheim tunneling increases because the electron transmission probability grows exponentially with decreasing barrier width, leading to increased leakage. Therefore, power consumption increases, rather than improved data retention, write speed, or endurance degradation, which are affected by different physical factors.

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