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Which outcome increases when silicon's energy band gap narrows?

A)Intrinsic carrier concentration increases rapidly
B)Dielectric breakdown strength is enhanced
C)Reverse saturation current decreases markedly
D)Threshold voltage for MOSFET drops

💡 Explanation

An increased intrinsic carrier concentration will increase when an energy band decreases, because a smaller band gap enables smaller excitation energies for electrons via thermal excitation. Therefore, more carriers populate bands, rather than remaining inactive valence electrons given by higher band gap energies.

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