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Which outcome increases within crystalline silicon at elevated temperatures?

A)Intrinsic carrier concentration
B)Debye-Waller factor
C)Critical shear stress
D)Ferromagnetic domain volume

💡 Explanation

Temperature increases the amplitude of atomic vibrations within the lattice structure, activating free electrons through Thermal excitation. Thus, the intrinsic carrier concentration increases, rather than crystal strength improvements, because the process induces electron delocalization therefore band structure alterations rather than atomic alignment.

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