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← ScienceWhich outcome is caused at a strained silicon interface bonded with gallium nitride due to quantum confinement effects?
A)Band structure energy-level quantization✓
B)Increased ionic bond formation activity
C)Reduced thermal phonon scattering rate
D)Increased substrate material conductivity
💡 Explanation
Band structure energy-level quantization happens at the interface because the quantum confinement within the strained silicon causes the electron energy levels to separate discretely via quantum mechanical principles. Therefore, a quantum well result, rather than metallic conductivity or improved ionic transfer because the energy is position-dependent boundary.
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