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Which outcome is observed when exceeding the dopant incorporation limit when fabricating a silicon semiconductor?

A)Formation of impurity band tailing
B)Increased electron-hole recombination
C)Reduced free carrier concentration
D)Significant lattice distortion reduction

💡 Explanation

Impurity band tailing occurs because exceeding the dopant solubility limit results in clustering and the formation of energy bands that extend into the band gap near the conduction or valence band edges. Therefore, impurity band tailing reduces effective band gap, rather than maintaining ideal semiconductor properties.

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