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Which outcome is unavoidable when manufacturing solid-state drives due to quantum mechanics?

A)Electron tunneling corrupts adjacent cells
B)Increased gate dielectric thermal breakdown
C)Write endurance degrades linearly over time
D)Data retention reduces because of resistance

💡 Explanation

Electron tunneling inevitably corrupts adjacent memory cells in solid-state drives because electrons have a probability to tunnel through insulators. Therefore, data errors increase, rather than other electrical degradation mechanisms affecting drive life under normal conditions.

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