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Which outcome jeopardizes the writing precision of an EUV lithography system?

A)Reduced beam coherence effects
B)Increased stochastic photon arrival
C)Enhanced plasma mirror reflectivity
D)Improved heat sink thermal capacity

💡 Explanation

Reduced beam coherence smears the projected mask image because the **interference** fringes become indistinct, therefore line edge roughness increases, rather than achieving crisp lines; stochastic photon arrival contributes noise but isn't primary.

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