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Which outcome manifests because exceeding the thermal-phonon capacity within gallium-arsenide semiconductors?

A)Intrinsic carrier concentration surges exponentially
B)Electron mobility becomes relatively enhanced
C)Band gap widens significantly and predictably
D)Piezoelectric effects reach substantial magnitudes

💡 Explanation

The intrinsic carrier concentration surges exponentially due to increased thermal energy causing more electrons to overcome the band gap through thermal excitation, rather than a widening band gap; therefore increased minority carriers dominate transport at temperature.

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