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Which outcome occurs crystal doping diminishes the resistance?

A)Increased electron or hole concentration
B)Reduced grain boundary scattering
C)Enhanced phonon-electron interactions
D)Suppressed thermal carrier generation

💡 Explanation

Increased carrier concentration lowers resistance due to increased charge carriers avalable for current flow. The mechanism is increased electron or hole concentration, because doping introduces more charge carriers. Therefore the resistance decreases, rather than other mechanisms inhibiting carrier movement.

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