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← ScienceWhich outcome occurs due to exceeding silicon's band bending limit?
A)Increased surface electron-hole recombination✓
B)Decreased channel dopant concentration
C)Reduced gate dielectric thickness
D)Enhanced bulk silicon mobility
💡 Explanation
Increased surface electron-hole recombination occurs if the band bending approaches the bandgap because of increased carrier density at the surface promotes annihilation via Shockley-Read-Hall recombination. Therefore, surface trapping becomes prominent, rather than influencing doping or bulk properties.
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