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Which outcome occurs when a heavily-doped semiconductor photodiode is rapidly reverse-biased?

A)Avalanche breakdown generates free carriers
B)Thermal runaway quickly damages junction
C)Zener tunneling resistance decreases rapidly
D)Ohmic heating drastically increases resistance

💡 Explanation

Avalanche breakdown occurs because impact ionization amplifies electron-hole pairs in the high electric field rather than simple thermal effects. Therefore, free carriers are generated, rather than thermal runaway because the depletion region quickly widens preventing this.

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