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Which outcome occurs when a laser annealing process cools polycrystalline silicon too rapidly?

A)Formation of crystal defects increases
B)Grain size distribution becomes uniform
C)Carrier mobility increases greatly
D)Residual stress within grains declines

💡 Explanation

Rapid cooling causes increased crystal defects because the atoms lack sufficient time for proper reordering during the recrystallization process, therefore defect formation increases, rather than grain uniformity, because grain growth is kinetically limited.

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