Which outcome occurs when a metal-oxide-semiconductor field-effect transistor (MOSFET) gate voltage exceeds the dielectric breakdown limit?

💡 Explanation

When gate voltage exceeds the dielectric breakdown voltage, the gate oxide capacitance's insulating properties fail because the electric field exceeds the material's breakdown strength, immediately creating a short circuit. Therefore, gate oxide breakdown occurs, rather than other effects that require transistor operation within specified voltage range.

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