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Which outcome occurs when a MOSFET array's gate oxide suffers dielectric breakdown?

A)Increased static power consumption
B)Improved switching noise margin
C)Faster transient response time
D)Lower gate threshold voltage

💡 Explanation

Increased static power consumption occurs because dielectric breakdown creates a conductive path through the gate oxide of the MOSFET array, enabling leakage current; therefore, static power increases dramatically rather than improving other transistor parameters which require a functional gate.

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