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Which outcome occurs when a MOSFET experiences drain-induced barrier lowering?

A)Increased subthreshold leakage current
B)Reduced gate oxide breakdown voltage
C)Enhanced channel mobility saturation
D)Improved threshold voltage stability

💡 Explanation

Elevated drain voltage reduces the potential barrier, leading to increased subthreshold leakage current because drain-induced barrier lowering weakens gate control. Therefore leakage increases; rather than a controlled suppression as normally insured by gate insulation.

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