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Which outcome occurs when a MOSFET, used in a high-frequency power amplifier, experiences gate-oxide breakdown?

A)Increased gate leakage current
B)Decreased channel carrier mobility
C)Enhanced thermal noise generation
D)Improved amplifier power efficiency

💡 Explanation

Increased gate leakage current results because gate-oxide breakdown creates a conductive path through the insulating layer due to dielectric rupture. This allows significant current to flow from the gate to the channel influencing the MOSFET's behavior therefore increased leakage, rather than improved efficiency.

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