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Which outcome occurs when a plasma etcher's RF power exceeds thermal limits?

A)Increased volatile byproduct generation
B)Uniform etch rate improvement
C)Reduced substrate ion bombardment
D)Enhanced mask selectivity stability

💡 Explanation

Increased RF power leads to excessive process gas dissociation via collisional excitation, therefore generating more reactive radicals, and intensifying surface reactions to form more volatile byproducts, rather than stabilizing the plasma as would occur normally.

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