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Which outcome occurs when a rapidly pulsed laser induces localized heating within a crystalline semiconductor lattice?

A)Ablation above the material's melting point
B)Increased thermoelectric Seebeck coefficient magnitude
C)Enhanced grain growth within the matrix
D)Increased equilibrium carrier recombination lifetime

💡 Explanation

Laser-induced heating causes ablation because rapid energy deposition leads to exceeding the melting point and subsequent material removal in the process of thermal ablation. Other options entail slower, equilibrium processes; therefore ablation occurs from localized, rapid heating rather than grain growth that requires more time.

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