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← ScienceWhich outcome occurs when a silicon crystal grows too rapidly during Czochralski pulling?
A)Increased polycrystalline domain formation✓
B)Elevated substrate melting temperature
C)Decreased dopant segregation coefficient
D)Enhanced defect diffusion rate
💡 Explanation
Rapid cooling causes polycrystalline domain formations because the solid-liquid interface becomes unstable, leading to non-uniform crystallization, thus disrupting the single-crystal structure; therefore, polycrystalline formation increases, rather than altering dopant segregation, melting point, or defect diffusion alone.
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