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Which outcome occurs when an avalanche photodiode's (APD) silicon crystal exceeds its bias threshold?

A)Impact ionization causes rapid carrier multiplication
B)Tunneling creates parasitic capacitance effects
C)Recombination increases average noise floor
D)Trapping reduces electron carrier drift mobility

💡 Explanation

Avalanche multiplication occurs because, above the bias threshold, impact ionization initiates a chain reaction. This causes rapid carrier multiplication within the silicon crystal; therefore increased gain, rather than increased noise, occurs under these conditions.

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