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Which outcome occurs when applying pressure to gallium arsenide?

A)Direct bandgap becomes indirect
B)Enhanced piezoelectric charge generation
C)Increased electron-hole recombination rate
D)Higher refractive transition frequency

💡 Explanation

Applying pressure modifies the crystal lattice spacing, which alters the electronic band structure. This affects the minimum energy required for electron transitions; therefore the direct bandgap becomes indirect rather than merely decreasing energy because indirect transitions become preferred.

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