VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which outcome occurs when attempting to read data in a flash memory cell exhibiting a thin oxide layer?

A)Unintended cell bit flips occur
B)Reduced cell threshold voltage occurs
C)Increased data retention lifespan
D)Faster programming speed is achieved

💡 Explanation

Unintended bit flips happen because quantum tunneling becomes significant through the thin oxide, injecting electrons despite the energy barrier; therefore, data corruption, rather than faster programming or improved retention occurs due to this charge leakage.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science