Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich outcome occurs when electron mobility decreases in an NMOS transistor channel?
A)Drain current saturation decreases✓
B)Gate oxide breakdown is prevented
C)Thermal runaway will be initiated
D)Substrate doping concentration declines
💡 Explanation
Decreased electron mobility increases the channel's resistance, and therefore decreases drain current saturation because the electric field needed for velocity saturation is higher, rather than other failure mechanisms; the voltage threshold is affected under different conditions.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- Which risk increases when an electrical power transformer continually operates significantly below its rated load?
- Which risk increases when power transformer's cooling fan circuit fails during peak load?
- Which outcome occurs in pneumatic systems when quick exhaust valve malfunctions and sticks closed after actuation?
- Which risk increases when a photovoltaic string inverter repeatedly disconnects?
- Which outcome occurs when high fuel pressure causes incomplete combustion in a diesel engine?
- In a quadcopter drone experiencing a motor failure, which mechanism is essential for maintaining controlled flight?
