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Which outcome occurs when electron mobility decreases in an NMOS transistor channel?

A)Drain current saturation decreases
B)Gate oxide breakdown is prevented
C)Thermal runaway will be initiated
D)Substrate doping concentration declines

💡 Explanation

Decreased electron mobility increases the channel's resistance, and therefore decreases drain current saturation because the electric field needed for velocity saturation is higher, rather than other failure mechanisms; the voltage threshold is affected under different conditions.

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