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Which outcome occurs when electrons exceed gallium arsenide threshold velocity?

A)Gunn diode negative differential resistance
B)Stable high-frequency linear amplification
C)Increased electron-hole plasma recombination
D)Material reaches superconductivity transition stage

💡 Explanation

Negative differential resistance happens because of the Gunn–Hilsum effect; electrons transfer to a higher energy but lower mobility satellite valley. Because the increased scattering causes reduced current, therefore the Gunn diode exhibits negative resistance, rather than behaving as normal resistor.

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