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Which outcome occurs when electrons exceed silicon dioxide's barrier?

A)Gate dielectric breakdown causes permanent damage
B)Increased channel mobility improves transistor speed
C)Reduced subthreshold swing sharpens switching
D)Enhanced short-channel effects worsen performance

💡 Explanation

Gate dielectric breakdown happens because exceeding the silicon dioxide barrier causes Fowler-Nordheim tunneling. This permanent damage leads to uncontrolled current flow, therefore damaging the gate dielectric, rather than improving transistor performance which requires controlled current.

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