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← ScienceWhich outcome occurs when excessive strain narrows band separation in silicon?
A)Increased electron-hole recombination rate✓
B)Decreased piezoelectric coefficient generation
C)Reduced electron mobility from defects
D)Enhanced thermal conductivity dominates
💡 Explanation
Increased electron-hole recombination rate occurs because narrowed band separation enables more frequent electron transitions via Shockley-Read-Hall (SRH) recombination. Therefore reduced charge carrier lifetime result, rather than increased mobility, because more defects decrease the recombination rate under smaller strain conditions.
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