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Which outcome occurs when hydrostatic pressure is greatly increased upon a silicon semiconductor at room temperature?

A)Reduced electron mobility results
B)Hall effect reaches saturation
C)Thermal runaway is imminent
D)Increased Auger recombination rate

💡 Explanation

Increased pressure narrows the silicon's band gap, causing increased carrier concentration; therefore, electron-phonon scattering via the deformation potential interaction causes decreased electron mobility, rather than saturation or thermal effects because hole concentration is only slightly affected.

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