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Which outcome occurs when internal molecular hydrogen accelerates recombination in amorphous silicon?

A)Dangling bond defect passivation decreases
B)Crystalline domain formation accelerates
C)Sub-gap light absorption amplitude increases
D)Photoluminescence quantum yield stays stable

💡 Explanation

Hydrogen diffusion enables dangling bond passivation via the Staebler-Wronski effect, because hydrogen atoms saturate these defects. Therefore, dangling bond density decreases, rather than increasing sub-gap absorption which would occur without passivation.

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