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Which outcome occurs when rapid cooling induces crystallization of amorphous silicon?

A)Trapped point defects concentration increases
B)Grain boundary surface energy decreases
C)Long-range phonon scattering diminishes
D)Radiative recombination rate increases

💡 Explanation

The increased density leads to defects; because as crystallization occurs via nucleation and growth, the interfaces trap impurities/vacancies; therefore point defect concentrations increase rather than boundary improvements from annealing or better radiative behavior.

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