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Which outcome occurs when rapid gate voltage changes induce high dI/dt in a MOSFET powering an inductive load?

A)Increased electromagnetic interference (EMI)
B)Enhanced gate oxide layer integrity
C)Improved switching efficiency overall
D)Reduced power dissipation significantly

💡 Explanation

Increased EMI occurs because parasitic inductance combined with high dI/dt causes significant voltage ringing due to inductive kickback, therefore generating unwanted electromagnetic radiation, rather than improving efficiency; gate stress increases under these conditions.

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