Which outcome occurs when source-drain voltage increases in a nanometer-scale MOSFET?

💡 Explanation

When source-drain voltage increases in nanoscale MOSFETs, the electric field across the channel increases significantly, enhancing electron tunneling through the potential barrier because of the reduced effective barrier width. Therefore, electron tunneling probability increases, rather than channel length modulation decreasing, subthreshold slope steepening, or saturation voltage decreasing, which are influenced by different physical mechanisms and bias conditions.

• Which outcome is accelerated by reduced disulfide bridging?
• Which consequence emerges when the control rods fail?
• Which consequence results when excessive vacancies concentrate within a metal's lattice?
• Which outcome occurs when a pulsed electric field causes dielectric breakdown in amorphous silicon?
• Which property change occurs when thermal energy overcomes intermolecular forces in a liquid polymer?
• Which phenomenon warps the spacetime fabric near neutron stars?