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Which outcome occurs when substitutional doping of a silicon crystal is performed to increase conductivity?

A)Fermi level shifts towards band
B)Acoustic phonon scattering diminishes
C)Debye temperature value increases
D)Intrinsic carrier concentration drops

💡 Explanation

The Fermi level shifts because substitutional doping introduces extra electrons or holes, performing band bending at the junction. Therefore, conductivity increases, rather than decreases, as the increased carriers move according to applied electric fields.

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