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← ScienceWhich outcome occurs when the Sn dopant concentration exceeds the solubility limit in a GaAs crystal grown by molecular beam epitaxy?
A)Formation of Sn precipitates occurs✓
B)GaAs crystal defects decrease drastically
C)Carrier mobility increases exponentially there
D)Epitaxial layer growth becomes strained less
💡 Explanation
Formation of Sn precipitates occurs because exceeding the solubility limit causes atoms to cluster via spinodal decomposition, rather than incorporating substitutionally. Therefore, Sn precipitates form rather than the crystal structure perfectly accommodating all Sn atoms.
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