Which outcome occurs when transistor gate dielectric thickness is reduced to a few nanometers?

💡 Explanation

When dielectric thickness is minimized in a transistor, quantum tunneling occurs because electrons can tunnel through the thin insulating layer due to the wave-like nature of particles, creating unwanted leakage current. Therefore increased quantum tunneling current results, rather than mobility reduction, speed enhancement, or capacitance decrease, which depend on different material properties and device physics.

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