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← ScienceWhich outcome reduces transistor gate leakage when silicon dioxide thins?
A)Increased quantum tunneling✓
B)Enhanced electron reflection
C)Decreased channel mobility
D)Elevated substrate temperature
💡 Explanation
Increased quantum tunneling allows electrons to pass from drain to floating gate. This occurs because silicon dioxide's barrier potential narrows; therefore, electron passage increases rather than mobility change with temperature because field remains potent.
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