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Which outcome results during semiconductor flash memory cell erase?

A)Electrons tunneling from floating gate
B)Holes accumulating within the substrate
C)Positive charge carriers recombining
D)Increased gate oxide dielectric breakdown

💡 Explanation

Electrons tunnel from the floating gate to the source because Fowler-Nordheim tunneling is enhanced by a strong electric field; therefore the cell is erased as charge is removed, rather than accumulating holes in the substrate.

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