Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← ScienceWhich outcome results during semiconductor flash memory cell erase?
A)Electrons tunneling from floating gate✓
B)Holes accumulating within the substrate
C)Positive charge carriers recombining
D)Increased gate oxide dielectric breakdown
💡 Explanation
Electrons tunnel from the floating gate to the source because Fowler-Nordheim tunneling is enhanced by a strong electric field; therefore the cell is erased as charge is removed, rather than accumulating holes in the substrate.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Science →- Which performance outcome affects refrigeration cycles encountering increased condenser temperature?
- Which risk increases when high voltage is applied to metal oxide varistor material containing ionic defects?
- Which outcome occurs when polyethylene pipes carrying natural gas are exposed to sustained tensile stress?
- Which consequence results when silicon's band gap collapses?
- Which consequence results when supercritical carbon dioxide's enthalpy change vanishes in a turbine?
- Which consequence results when quantum entanglement is disrupted in a quantum key distribution cryptographic system?
